The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Mar. 02, 2009
Masato Ofuji, Kawasaki, JP;
Katsumi Abe, Kawasaki, JP;
Hisae Shimizu, Tokyo, JP;
Ryo Hayashi, Yokohama, JP;
Masafumi Sano, Yokohama, JP;
Hideya Kumomi, Tokyo, JP;
Yasuyoshi Takai, Kawasaki, JP;
Takehiko Kawasaki, Kamakura, JP;
Norio Kaneko, Atsugi, JP;
Masato Ofuji, Kawasaki, JP;
Katsumi Abe, Kawasaki, JP;
Hisae Shimizu, Tokyo, JP;
Ryo Hayashi, Yokohama, JP;
Masafumi Sano, Yokohama, JP;
Hideya Kumomi, Tokyo, JP;
Yasuyoshi Takai, Kawasaki, JP;
Takehiko Kawasaki, Kamakura, JP;
Norio Kaneko, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10cmeVor less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.