The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jun. 30, 2008
Applicant:
Myung-ok Kim, Ichon-shi, KR;
Inventor:
Myung-Ok Kim, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device can prevent exposure of an inner wall of a recess pattern caused by misalignment between masks. A gate electrode is formed inside the recess pattern so that only a gate hard mask layer is exposed above a substrate surface. Since the gate electrode is not exposed above the substrate, it is possible to prevent SAC failure and decrease an aspect ratio of a gate pattern to increase an open margin of a contact hole. Thus, a semiconductor device having a recess channel gate structure which exhibits a superior refresh property is fabricated.