The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
May. 29, 2010
Applicants:
Mengyu Pan, Shanghai, CN;
Zengyi He, Shanghai, CN;
Kaiyu Chen, Shanghai, CN;
Inventors:
Assignee:
Alpha & Omega Semiconductor, Inc., Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop the trench MOSFET includes fabricate numerous trench MOSFETs on a wafer; add a Si3N4 isolation layer, capable of preventing the LTO patterning process from damaging the gate oxide, atop the wafer; add numerous ESD protection modules atop the Si3N4 isolation layer.