The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Apr. 05, 2007
Applicants:
Jang-eun Lee, Suwon-si, KR;
Kyung-tae Nam, Suwon-si, KR;
Se-chung OH, Suwon-si, KR;
Jun-ho Jeong, Suwon-si, KR;
Inventors:
Jang-Eun Lee, Suwon-si, KR;
Kyung-Tae Nam, Suwon-si, KR;
Se-Chung Oh, Suwon-si, KR;
Jun-Ho Jeong, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01B 13/00 (2006.01); C03C 25/68 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a minute pattern includes depositing a material layer on a semiconductor substrate having a conductive region, forming a first mask layer on the material layer, forming a recess region in the first mask layer, performing layer processing to form a first mask pattern in the recess region, and etching the material layer to form a material layer pattern.