The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Mar. 13, 2009
Young-min Min, Seongnam-si, KR;
Dae-kyu Choi, Suwon-si, KR;
Do-in Bae, Changwon-si, KR;
Yun-sik Yang, Suwon-si, KR;
Wan-goo Hwang, Yongin-si, KR;
Jin-man Kim, Yongin-si, KR;
Young-Min Min, Seongnam-si, KR;
Dae-Kyu Choi, Suwon-si, KR;
Do-In Bae, Changwon-si, KR;
Yun-Sik Yang, Suwon-si, KR;
Wan-Goo Hwang, Yongin-si, KR;
Jin-Man Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
New Power Plasma Co., Ltd., Seoul, KR;
Abstract
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.