The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2011

Filed:

Dec. 03, 2009
Applicants:

Valentin P. Gapontsev, Worcester, MA (US);

Nikolai Platonov, Worcester, MA (US);

Valentin Fomin, Burbach, GE;

Michael Vyatkin, Fryazino, RU;

Inventors:

Valentin P. Gapontsev, Worcester, MA (US);

Nikolai Platonov, Worcester, MA (US);

Valentin Fomin, Burbach, GE;

Michael Vyatkin, Fryazino, RU;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/30 (2006.01); H01S 3/098 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high power single mode fiber laser system is configured with an active fiber including coextending multimode core (MM) and cladding around the MM core. The MM core is doped with one or more ions selected from rare earth and transitional metals and has a bottleneck cross in accordance with one aspect of the disclosure. The bottleneck cross-section includes a relatively small uniformly dimensioned input end region, a frustoconical region and a relatively large uniformly dimensioned amplifying region. The refractive step index of the MM core is configured with a central dip shaped and dimensioned along the input region so as not to disturb a Gaussian field profile of fundamental mode, gradually transform the Gaussian field profile into the ring profile of the fundamental mode and support the latter along the amplifying region. In accordance with a further aspect, the core is further provided with an output transforming region with the dip which gradually shapes the ring field profile in the Gaussian field profile further distortlessly supported by the output end region. A variety of end and side pumping arrangements are employed with the structures configured in accordance with the first and second aspects.


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