The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Apr. 13, 2006
Mitsue Takahashi, Tsukuba, JP;
Shigeki Sakai, Tsukuba, JP;
Mitsue Takahashi, Tsukuba, JP;
Shigeki Sakai, Tsukuba, JP;
Abstract
A field-effect transistor for nonvolatile memory holding use and a field-effect transistor for logical operation use are manufactured in the same structure on the same semiconductor substrate without separately providing manufacturing processes for the field-effect transistors for the two uses. Both a memory circuit and a logic circuit of a semiconductor integrated circuit are composed of n-channel and p-channel field-effect transistors including a memory holding material in a gate insulating structure. A logical operation state, a memory writing state and a nonvolatile memory holding state are electrically switched by controlling the level and application timing of a voltage to be applied between a gate conductor and a substrate region of the n-channel and p-channel field-effect transistors including the memory holding material in the gate insulating structure.