The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Sep. 04, 2003
Joseph H. Johnson, Phoenix, AZ (US);
Pablo D'anna, Redding, CA (US);
Joseph H. Johnson, Phoenix, AZ (US);
Pablo D'Anna, Redding, CA (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: () a Silicon Carbide substrate, () a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bonding layer, or epitaxially grown on the Silicon Carbide substrate; and () at least one separation plug formed in the Silicon semiconductor material. The single bonding layer, or either layer of the double bonding layer, is selected from the group consisting of: {a Silicon dioxide layer; a Silicon layer; a carbon layer; a Silicon germanium (SiGe) layer; a tungsten silicide layer; a titanium suicide layer; and a cobalt silicide layer}. The separation plug extends from the top surface of the Silicon semiconductor material into the Silicon Carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the Silicon semiconductor material.