The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Nov. 15, 2006
Applicants:
Kuei-hsien Chen, Taipei, TW;
Chien-hung Lin, Nantou County, TW;
Chia-wen Hsu, Changua County, TW;
Li-chyong Chen, Taipei, TW;
Inventors:
Kuei-Hsien Chen, Taipei, TW;
Chien-Hung Lin, Nantou County, TW;
Chia-Wen Hsu, Changua County, TW;
Li-Chyong Chen, Taipei, TW;
Assignee:
Academia Sinica, , TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.