The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2011

Filed:

May. 22, 2007
Applicants:

Ebinazar Benjamin Namdas, Singapore, SG;

Tommy Cahyadi, Singapore, SG;

G. Subodh Mhaisalkar, Singapore, SG;

Pooi See Lee, Singapore, SG;

Zhikuan Chen, Singapore, SG;

Yeng Ming Lam, Singapore, SG;

Lixin Song, Singapore, SG;

Inventors:

Ebinazar Benjamin Namdas, Singapore, SG;

Tommy Cahyadi, Singapore, SG;

G. Subodh Mhaisalkar, Singapore, SG;

Pooi See Lee, Singapore, SG;

Zhikuan Chen, Singapore, SG;

Yeng Ming Lam, Singapore, SG;

Lixin Song, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.


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