The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Mar. 09, 2009
Applicants:
Yasunori Yokoyama, Ichihara, JP;
Hisayuki Miki, Chiba, JP;
Inventors:
Yasunori Yokoyama, Ichihara, JP;
Hisayuki Miki, Chiba, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/324 (2006.01); H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.