The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Sep. 21, 2006
Kook-nyung Lee, Seoul, KR;
Woo Kyeong Seong, Seongnam-si, KR;
Suk-won Jung, Osan-si, KR;
Won-hyo Kim, Yongin-si, KR;
Kook-Nyung Lee, Seoul, KR;
Woo Kyeong Seong, Seongnam-si, KR;
Suk-Won Jung, Osan-si, KR;
Won-hyo Kim, Yongin-si, KR;
Abstract
The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.