The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Jan. 21, 2010
Kazuaki Iwasawa, Yokohama, JP;
Takeshi Hoshi, Yokohama, JP;
Keisuke Nakazawa, Yokohama, JP;
Shogo Matsuo, Yokohama, JP;
Takashi Nakao, Yokohama, JP;
Ryu Kato, Yokohama, JP;
Tetsuya Kai, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Kazuaki Iwasawa, Yokohama, JP;
Takeshi Hoshi, Yokohama, JP;
Keisuke Nakazawa, Yokohama, JP;
Shogo Matsuo, Yokohama, JP;
Takashi Nakao, Yokohama, JP;
Ryu Kato, Yokohama, JP;
Tetsuya Kai, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.