The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Apr. 07, 2010
Hidekazu Nitta, Chiba, JP;
Hidekazu Miyake, Mobara, JP;
Takuo Kaitoh, Mobara, JP;
Daisuke Sonoda, Chiba, JP;
Hidekazu Nitta, Chiba, JP;
Hidekazu Miyake, Mobara, JP;
Takuo Kaitoh, Mobara, JP;
Daisuke Sonoda, Chiba, JP;
Hitachi Displays, Ltd., Chiba, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo-ken, JP;
Abstract
Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.