The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Feb. 05, 2008
Henry M. Daghighian, Mountain View, CA (US);
Kevin J. Mccallion, Charlestown, MA (US);
Henry M. Daghighian, Mountain View, CA (US);
Kevin J. McCallion, Charlestown, MA (US);
Finisar Corporation, Sunnyvale, CA (US);
Abstract
Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.