The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8077507 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 13, 2011

Filed:

Feb. 17, 2011
Applicant:

Kyoung-wook Park, Gyeonggi-do, KR;

Inventor:

Kyoung-Wook Park, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase-change memory device includes a data write control unit configured to generate write control signals according to a data combination of a plurality of input data and output write control codes with a code update period controlled according to an activation period of one of the write control signal, and a data write unit configured to output a program current in response to the write control signals and control a level of the program current according to a code combination of the write control codes.


Find Patent Forward Citations

Park, Kyoung-Wook. (2011). Phase-change memory device (U.S. Patent No. 8077507). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8077507

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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