The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2011

Filed:

Mar. 09, 2007
Applicants:

Steven G. Young, Austin, TX (US);

David M. Szmyd, Austin, TX (US);

Inventors:

Steven G. Young, Austin, TX (US);

David M. Szmyd, Austin, TX (US);

Assignee:

Silicon Laboratories, Austin, TX (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/8605 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicide-interface polysilicon resistor is disclosed. The silicide-interface polysilicon resistor includes a substrate, an oxide layer located on top of the substrate, and a polysilicon layer located on top of the oxide layer. The polysilicon layer includes multiple semiconductor junctions. The silicide-interface polysilicon resistor also includes a layer of silicide sheets, and at least one of the silicon sheets is in contact with one of the semiconductor junctions located within the polysilicon layer.


Find Patent Forward Citations

Young, Steven. (2011). Silicide-interface polysilicon resistor (U.S. Patent No. 8076754). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8076754

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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