The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Feb. 12, 2008
Masashi Hayashi, Hyogo, JP;
Shin Hashimoto, Osaka, JP;
Masashi Hayashi, Hyogo, JP;
Shin Hashimoto, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate () including a silicon carbide layer (); a high-concentration impurity region () provided in the silicon carbide layer (); an ohmic electrode () electrically connected with the high-concentration impurity region (); a channel region electrically connected with the high-concentration impurity region; a gate insulating layer () provided on the channel region; and a gate electrode () provided on the gate insulating layer (). The ohmic electrode () contains an alloy of titanium, silicon and carbon, and the gate electrode () contains titanium silicide.