The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
May. 16, 2008
Applicant:
Eun Sang Cho, Seoul, KR;
Inventor:
Eun Sang Cho, Seoul, KR;
Assignee:
Dongbu Hitek Co., Ltd, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a method for forming a dual gate electrode of a semiconductor device, which may improve manufacturing productivity by simplifying a process of forming gate electrodes in PMOS and NMOS regions, respectively, and may provide improvement in performance by making the two gate electrodes have a different thickness and material state in a manner that one of the two gate electrodes has a single-layer structure and the other one has a two-layer structure.
Cho, Eun. (2011). Semiconductor device having a dual gate electrode and methods of making the same (U.S. Patent No. 8076729). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8076729
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile