The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Jul. 14, 2010
Jae-han Cha, Chungcheongbuk-do, KR;
Kyung-ho Lee, Chungcheongbuk-do, KR;
Sun-goo Kim, Chungcheongbuk-do, KR;
Hyung-suk Choi, Chungcheongbuk-do, KR;
Ju-ho Kim, Chungcheongbuk-do, KR;
Jin-young Chae, Chungcheongbuk-do, KR;
In-taek OH, Chungcheongbuk-do, KR;
Jae-Han Cha, Chungcheongbuk-do, KR;
Kyung-Ho Lee, Chungcheongbuk-do, KR;
Sun-Goo Kim, Chungcheongbuk-do, KR;
Hyung-Suk Choi, Chungcheongbuk-do, KR;
Ju-Ho Kim, Chungcheongbuk-do, KR;
Jin-Young Chae, Chungcheongbuk-do, KR;
In-Taek Oh, Chungcheongbuk-do, KR;
Abstract
The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.