The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Jun. 27, 2006
Daisuke Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tetsuzo Ueda, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Hiroaki Ueno, Osaka, JP;
Daisuke Ueda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tetsuzo Ueda, Osaka, JP;
Manabu Yanagihara, Osaka, JP;
Masahiro Hikita, Hyogo, JP;
Hiroaki Ueno, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a transistor, an AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type control layer, and a p-type contact layerare formed in this order on a sapphire substrate. The transistor further includes a gate electrodein ohmic contact with the p-type contact layer, and a source electrodeand a drain electrodeprovided on the undoped AlGaN layer. By applying a positive voltage to the p-type control layer, holes are injected into a channel to increase a current flowing in the channel.