The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Apr. 28, 2006
Yukio Narukawa, Tokushima, JP;
Tomotsugu Mitani, Awa, JP;
Masatsugu Ichikawa, Anan, JP;
Akira Kitano, Komatsushima, JP;
Takao Misaki, Anan, JP;
Yukio Narukawa, Tokushima, JP;
Tomotsugu Mitani, Awa, JP;
Masatsugu Ichikawa, Anan, JP;
Akira Kitano, Komatsushima, JP;
Takao Misaki, Anan, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the electrical conductivity type of the current pass region on the Si substrate is p-type. Furthermore, in the nitride semiconductor element which has a nitride semiconductor layer over an Si substrate, at least a portion of the Si substrate and the nitride semiconductor layer are included in an current pass region, and the majority carriers of the current pass region of the Si substrate are holes.