The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Nov. 27, 2009
Shriram Ramanathan, Acton, MA (US);
Changhun Ko, Cambridge, MA (US);
Shriram Ramanathan, Acton, MA (US);
Changhun Ko, Cambridge, MA (US);
President and Fellows of Harvard College, Cambridge, MA (US);
Abstract
Phase transitions (such as metal-insulator transitions) are induced in oxide structures (such as vanadium oxide thin films) by applying an electric field. The electric field-induced phase transitions are achieved in VOstructures that scale down to nanometer range. In some embodiments, the optical and/or dielectric properties of the oxide structures are actively tuned by controllably varying the applied electric field. Applying a voltage to a single-phase oxide material spontaneously leads to the formation of insulating and conducting regions within the active oxide material. The dimensions and distributions of such regions can be dynamically tuned by varying the applied electric field and/or the temperature. In this way, oxide materials with dynamically tunable optical and/or dielectric properties are created.