The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Sep. 30, 2008
Munir H. Nayfeh, Urbana, IL (US);
Salman A. H. Alrokayan, Riyadh, SA;
Munir H. Nayfeh, Urbana, IL (US);
Salman A. H. Alrokayan, Riyadh, SA;
Nanosi Advanced Technologies, Inc., Champaign, IL (US);
Abstract
An embodiment of the invention is luminescent silicon nanoparticle polymer composite that can serve as a wavelength converter or a UV absorber. The composite includes a polymer or an organosilicon compound; and within the polymer or organosilicon compound, a dispersion of luminescent silicon nanoparticles. In a preferred composite, the silicon nanoparticles have multiple Si—H termination sites, the silicon nanoparticles being linked to a C site to produce a silicon carbide bond (Si—C). In a preferred embodiment, the polymer comprises polyurethane. A composite of the invention can perform wavelength conversion. In a wavelength converted film of the invention, the silicon nanoparticles are incorporated into the polymer or organosilicon compound in a quantity sufficient for wavelength conversion but small enough to have no or an insubstantial effect on the properties of the polymer or the organosilicon compound. A white LED of the invention includes a light emitting diode having a narrow band wavelength output. A luminescent silicon wavelength converter includes a composite film as described above for converting the narrow band wavelength output into wide band wavelength output. In a preferred embodiment, the LED comprises a GaN LED, and the wavelength converter film is disposed on an active region of the LED.