The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Sep. 04, 2008
Tae Kyung Won, Suwon, KR;
Soo Young Choi, Fremont, CA (US);
Dong Kil Yim, Sungnam, KR;
Jriyan Jerry Chen, Santa Clara, CA (US);
Beom Soo Park, San Jose, CA (US);
Tae Kyung Won, Suwon, KR;
Soo Young Choi, Fremont, CA (US);
Dong Kil Yim, Sungnam, KR;
Jriyan Jerry Chen, Santa Clara, CA (US);
Beom Soo Park, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture having a hydrogen containing gas to a silicon containing gas flow rate ratio greater than about 200:1 into the processing chamber, maintaining a first process pressure greater than about 6 Torr in the processing chamber to deposit a first microcrystalline silicon containing layer in presence of a plasma formed from the first gas mixture, supplying a second gas mixture into the processing chamber, and maintaining a second process pressure less than about 5 Torr in the processing chamber to deposit a second microcrystalline silicon containing layer in presence of a plasma formed from the second gas mixture.