The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Apr. 01, 2010
Hideaki Yamakoshi, Tokyo, JP;
Hideyuki Yashima, Tokyo, JP;
Shinichiro Abe, Tokyo, JP;
Yasuhiro Taniguchi, Tokyo, JP;
Hideaki Yamakoshi, Tokyo, JP;
Hideyuki Yashima, Tokyo, JP;
Shinichiro Abe, Tokyo, JP;
Yasuhiro Taniguchi, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
In processing memory cells for forming a nonvolatile memory in a semiconductor device, a second polysilicon film is formed in such a manner as to cover a first polysilicon film and a dummy gate electrode. Thus, the second polysilicon film is formed reflecting the shapes of a step difference portion and a gap groove. Particularly, in the second polysilicon film covering the gap groove, a concave part is formed. Subsequently, over the second polysilicon film, an antireflection film is formed. Thus, the antireflection film having high flowability flows from the higher region to the lower region of the step difference portion, but is stored in a sufficient amount in the concave part. Accordingly, the antireflection film is supplied from the concave part so as to compensate for the amount of the antireflection film to flow out therefrom.