The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2011

Filed:

Aug. 04, 2009
Applicants:

Howard H. Chen, Yorktown Heights, NY (US);

Louis C. Hsu, Fishkill, NY (US);

Jack A. Mandelman, Flat Rock, NC (US);

Chun-yung Sung, Poughkeepsie, NY (US);

Inventors:

Howard H. Chen, Yorktown Heights, NY (US);

Louis C. Hsu, Fishkill, NY (US);

Jack A. Mandelman, Flat Rock, NC (US);

Chun-Yung Sung, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.


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