The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2011

Filed:

Jan. 25, 2011
Applicant:

Hye-hyang Park, Yongin-si, KR;

Inventor:

Hye-Hyang Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a polycrystalline silicon thin film for a thin film transistor (TFT), a mask pattern used for the method, and a method of fabricating a flat panel display device using the method and the mask pattern. In one embodiment, a mask pattern includes a plurality of regions, each of the regions having at least one of one or more transparent portions or one or more non-transparent portions. A total area of the one or more transparent portions and the one or more non-transparent portions in one of the regions is substantially equal to a total area of the one or more transparent portions and the one or more non-transparent portions in at least one other of the regions. A total area of the transparent portions in the mask pattern is different from a total area of the non-transparent portions in the mask pattern.


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