The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Mar. 02, 2006
Yuhzoh Tsuda, Sakurai, JP;
Shigetoshi Ito, Shijonawate, JP;
Mototaka Taneya, Nara, JP;
Yoshihiro Ueta, Yamatokoriyama, JP;
Teruyoshi Takakura, Tenri, JP;
Yuhzoh Tsuda, Sakurai, JP;
Shigetoshi Ito, Shijonawate, JP;
Mototaka Taneya, Nara, JP;
Yoshihiro Ueta, Yamatokoriyama, JP;
Teruyoshi Takakura, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.