The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Mar. 21, 2008
Howard Branz, Boulder, CO (US);
Anna Duda, Denver, CO (US);
David S. Ginley, Evergreen, CO (US);
Vernon Yost, Littleton, CO (US);
Daniel Meier, Atlanta, GA (US);
James S. Ward, Golden, CO (US);
Howard Branz, Boulder, CO (US);
Anna Duda, Denver, CO (US);
David S. Ginley, Evergreen, CO (US);
Vernon Yost, Littleton, CO (US);
Daniel Meier, Atlanta, GA (US);
James S. Ward, Golden, CO (US);
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Abstract
A method () of texturing silicon surfaces () such to reduce reflectivity of a silicon wafer () for use in solar cells. The method () includes filling () a vessel () with a volume of an etching solution () so as to cover the silicon surface) of a wafer or substrate (). The etching solution () is made up of a catalytic nanomaterial () and an oxidant-etchant solution (). The catalytic nanomaterial () may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution () includes an etching agent (), such as hydrofluoric acid, and an oxidizing agent (), such as hydrogen peroxide. Etching () is performed for a period of time including agitating or stirring the etching solution (). The etch time may be selected such that the etched silicon surface () has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.