The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
May. 27, 2010
Silviu Velicu, Darien, IL (US);
Christoph H. Grein, Wheaton, IL (US);
Sivalingam Sivananthan, Naperville, IL (US);
Silviu Velicu, Darien, IL (US);
Christoph H. Grein, Wheaton, IL (US);
Sivalingam Sivananthan, Naperville, IL (US);
EPIR Technologies, Inc., Bolingbrook, IL (US);
Abstract
A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.