The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Dec. 02, 2009
Minoru Ikarashi, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.