The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Apr. 30, 2008
Applicant:
Tacettin Isik, Saratoga, CA (US);
Inventor:
Tacettin Isik, Saratoga, CA (US);
Assignee:
Integrated Device Technology, inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01); H01L 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
N-channel field effect transistor Proportional To Absolute Temperature (N-PTAT) cells are connected to a first supply voltage and P-channel field effect transistor Proportional To Absolute Temperature (P-PTAT) cells are connected to a second supply voltage. A coupling circuit connects at least one of the N-PTAT cells to at least one of the P-PTAT cells. These circuits can be used to provide a voltage reference and/or a supply voltage level detector. Related operating methods are also described.