The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Mar. 09, 2010
Yoshimitsu Murase, Kanagawa, JP;
Kenya Kobayashi, Kanagawa, JP;
Hideo Yamamoto, Kanagawa, JP;
Atsushi Kaneko, Kanagawa, JP;
Yoshimitsu Murase, Kanagawa, JP;
Kenya Kobayashi, Kanagawa, JP;
Hideo Yamamoto, Kanagawa, JP;
Atsushi Kaneko, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device, includes a semiconductor layer of a second conductive type, a first diffused region of a first conductive type formed in the semiconductor layer, a second diffused region of the second conductive type selectively formed in the first diffused region, a trench formed in the semiconductor layer, a polysilicon formed in the trench with an insulator intervening, a first oxide film formed on the polysilicon so that the first oxide film is buried in the trench, a second oxide film formed on the first oxide film so that the second oxide film is buried in the trench, and a flowable insulator film formed on the second oxide film so that the flowable insulator film is buried in the trench.