The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Mar. 20, 2009
Applicants:
Masao Ishikawa, Kanagawa-ken, JP;
Katsunori Yahashi, Kanagawa-ken, JP;
Inventors:
Masao Ishikawa, Kanagawa-ken, JP;
Katsunori Yahashi, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nonvolatile semiconductor memory device with a substrate. A plurality of dielectric films and electrode films are alternately stacked on the substrate and have a through hole penetrating in the stacking direction. A semiconductor pillar is formed inside the through hole. A charge storage layer is provided at least between the semiconductor pillar and the electrode film. At least part of a side surface of a portion of the through hole located in the electrode film is sloped relative to the stacking direction.