The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Aug. 08, 2008
Kenji Gomikawa, Yokohama, JP;
Tadashi Iguchi, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Shoichi Watanabe, Yokkaichi, JP;
Kenji Gomikawa, Yokohama, JP;
Tadashi Iguchi, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Shoichi Watanabe, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A memory cell includes a floating gate electrode, a first inter-electrode insulating film and a control gate electrode. A peripheral transistor includes a lower electrode, a second inter-electrode insulating film and an upper electrode. The lower electrode and the upper electrode are electrically connected via an opening provided on the second inter-electrode insulating film. The first and second inter-electrode insulating films include a high-permittivity material, the first inter-electrode insulating film has a first structure, and the second inter-electrode insulating film has a second structure different from the first structure.