The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Mar. 27, 2009
Kenji Gomikawa, Yokohama, JP;
Hiroyuki Kutsukake, Yokohama, JP;
Yoshiko Kato, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Kenji Gomikawa, Yokohama, JP;
Hiroyuki Kutsukake, Yokohama, JP;
Yoshiko Kato, Yokohama, JP;
Mitsuhiro Noguchi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A first select transistor is connected to one end of a plurality of memory cell transistors that are serially connected. A second select transistor is connected to the other end of the serially connected memory cell transistors. A first impurity diffusion region is formed in a semiconductor substrate and constitutes a first main electrode of the first select transistor. A second impurity diffusion region is formed in the semiconductor substrate and constitutes a second main electrode of the second select transistor. A depth of the first impurity diffusion region is greater than a depth of the second impurity diffusion region.