The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Nov. 03, 2009
Qufei Chen, San Jose, CA (US);
Robert Xu, Fremont, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Qufei Chen, San Jose, CA (US);
Robert Xu, Fremont, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.