The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2011

Filed:

Dec. 13, 2007
Applicants:

Koichi Mukasa, Sapporo, JP;

Kazuhisa Sueoka, Sapporo, JP;

Seiji Takeda, Sapporo, JP;

Satoshi Hattori, Nara, JP;

Yoshiki Yamada, Sapporo, JP;

Makoto Sawamura, Sapporo, JP;

Hiroichi Ozaki, Kayama, JP;

Atsushi Ishii, Sapporo, JP;

Motonori Nakamura, Sapporo, JP;

Hirotaka Hosoi, Sapporo, JP;

Inventors:

Koichi Mukasa, Sapporo, JP;

Kazuhisa Sueoka, Sapporo, JP;

Seiji Takeda, Sapporo, JP;

Satoshi Hattori, Nara, JP;

Yoshiki Yamada, Sapporo, JP;

Makoto Sawamura, Sapporo, JP;

Hiroichi Ozaki, Kayama, JP;

Atsushi Ishii, Sapporo, JP;

Motonori Nakamura, Sapporo, JP;

Hirotaka Hosoi, Sapporo, JP;

Assignees:

Mitsumi Electric Co., Ltd., Tokyo, JP;

Other;

Semicon Craft Technologies, Hokkaido, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/403 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/40 (2006.01); A61B 5/00 (2006.01); C12Q 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high-sensitivity field effect transistor using as a channel ultrafine fiber elements such as carbon nanotube, and a biosensor using it. The field effect transistor comprises a substrate, a source electrode and a drain electrode arranged on the substrate, a channel for electrically connecting the source electrode with the drain electrode, and a gate electrode causing polarization due to the movement of free electrons in the substrate. For example, the substrate has a support substrate consisting of semiconductor or metal, a first insulating film formed on a first surface of the support substrate, and a second insulating film formed on a second surface of the support substrate, the source electrode, the drain electrode, and the channel arranged on the first insulating film, the gate electrode disposed on the second insulating film.


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