The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Aug. 03, 2006
Takashi Udagawa, Chichibu, JP;
Takashi Udagawa, Chichibu, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides a light-emitting diode () including a first conductive type silicon single crystal substrate (), a light-emitting section () including a first pn junction structure composed of a III-group nitride semiconductor on the substrate, a first polarity ohmic electrode () provided on the light-emitting section, and a second polarity ohmic electrode () on the same side as the light-emitting section with respect to the substrate, wherein a second pn junction structure () is configured in a region which extends from the substrate to the light-emitting section, the substrate is provided with a light-reflecting hole () from the back surface of the substrate opposite to the side on which the light-emitting section of the substrate is provided toward the stacking direction, and the inner surface of the light-reflecting hole and the back surface of the substrate are coated with a metallic film ().