The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Aug. 03, 2009
Qiang Huang, Dresden, DE;
Tobias Canzler, Dresden, DE;
Ulrich Denker, Dresden, DE;
Ansgar Werner, Dresden, DE;
Karl Leo, Dresden, DE;
Kentaro Harada, Fukuoka, JP;
Qiang Huang, Dresden, DE;
Tobias Canzler, Dresden, DE;
Ulrich Denker, Dresden, DE;
Ansgar Werner, Dresden, DE;
Karl Leo, Dresden, DE;
Kentaro Harada, Fukuoka, JP;
Novaled AG, Dresden, DE;
Abstract
The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.