The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Dec. 14, 2009
Applicants:
Atsushi Moriya, Toyama, JP;
Tetsuya Marubayashi, Toyama, JP;
Yasuhiro Inokuchi, Toyama, JP;
Inventors:
Assignee:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.