The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Jun. 12, 2009
Applicant:
Tadashi Terasaki, Imizu, JP;
Inventor:
Tadashi Terasaki, Imizu, JP;
Assignee:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01);
U.S. Cl.
CPC ...
Abstract
A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber.