The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Sep. 16, 2009
Woo Seok Cheong, Daejeon, KR;
Sung Mook Chung, Gyeonggi-do, KR;
Min Ki Ryu, Seoul, KR;
Chi Sun Hwang, Daejeon, KR;
Hye Yong Chu, Daejeon, KR;
Woo Seok Cheong, Daejeon, KR;
Sung Mook Chung, Gyeonggi-do, KR;
Min Ki Ryu, Seoul, KR;
Chi Sun Hwang, Daejeon, KR;
Hye Yong Chu, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a method of fabricating a thin film transistor including source and drain electrodes, a novel channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The method includes the steps of forming the channel layer using an oxide semiconductor doped with boron; and patterning the channel layer. The channel layer formed is an oxide semiconductor thin film doped with boron. The electrical characteristics and high temperature stability of the thin film transistor are improved remarkably.