The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2011

Filed:

Jun. 03, 2010
Applicants:

Ajeet Rohatgi, Marietta, GA (US);

Vijay Yelundur, Canton, GA (US);

Preston Davis, Atlanta, GA (US);

Vinodh Chandrasekaran, Suwanee, GA (US);

Ben Damiani, Atlanta, GA (US);

Inventors:

Ajeet Rohatgi, Marietta, GA (US);

Vijay Yelundur, Canton, GA (US);

Preston Davis, Atlanta, GA (US);

Vinodh Chandrasekaran, Suwanee, GA (US);

Ben Damiani, Atlanta, GA (US);

Assignee:

Suniva, Inc., Norcross, GA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.


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