The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Dec. 22, 2008
Frederic Nabki, Longueil, CA;
Mourad El-gamal, Brossard, CA;
Tomas A. Dusatko, Vancouver, CA;
Srikar Vengallatore, Montreal, CA;
Frederic Nabki, Longueil, CA;
Mourad El-Gamal, Brossard, CA;
Tomas A. Dusatko, Vancouver, CA;
Srikar Vengallatore, Montreal, CA;
The Royal Institution for the Advancement of Learning/McGill University, Montreal, Quebec, CA;
Abstract
A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method provides for processing and manufacturing is steps limiting a maximum exposure of an integrated circuit upon which the MEMS is manufactured during MEMS manufacturing to below a temperature wherein CMOS circuitry is adversely affected, for example below 400° C., and sometimes to below 300° C. or 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronic integrated circuits, such as Si CMOS circuits.