The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Aug. 18, 2009
Te-chung Wang, Taichung County, TW;
Chun-jong Chang, Hsinchu County, TW;
Kun-fu Huang, Miaoli County, TW;
Te-Chung Wang, Taichung County, TW;
Chun-Jong Chang, Hsinchu County, TW;
Kun-Fu Huang, Miaoli County, TW;
Lextar Electronics Corp., Hsinchu, TW;
Abstract
A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T, and the barrier layers are formed at a growth temperature T, where T<T. Then, a second type doped semiconductor layer is formed on the light emitting layer.