The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Dec. 28, 2010
C. Kumar N. Patel, Los Angeles, CA (US);
Arkadiy Lyakh, Marina del Ray, CA (US);
Alexei Tsekoun, Los Angeles, CA (US);
Richard Maulini, Los Angeles, CA (US);
C. Kumar N. Patel, Los Angeles, CA (US);
Arkadiy Lyakh, Marina del Ray, CA (US);
Alexei Tsekoun, Los Angeles, CA (US);
Richard Maulini, Los Angeles, CA (US);
Pranalytica, Inc., Santa Monica, CA (US);
Abstract
A submount for a semiconductor laser. The submount has a layer of silicon carbide (SiC) and a layer of aluminum nitride (AlN) deposited on the layer of SiC. The submount is bonded to the InP-based laser by a hard solder applied to the AlN layer. Preferably, the thickness of the AlN layer is ten to twenty microns, the thickness of the SiC layer is two hundred fifty microns, and the solder is a gold-tin (AuSn) eutectic. The semiconductor laser may be a quantum cascade laser (QCL). Similar combinations of submount materials can be found for other semiconductor laser material systems and types.