The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2011

Filed:

Oct. 31, 2008
Applicants:

Eric Yang, Saratoga, CA (US);

Ognjen Milic, San Jose, CA (US);

Jinghai Zhou, San Jose, CA (US);

Inventors:

Eric Yang, Saratoga, CA (US);

Ognjen Milic, San Jose, CA (US);

Jinghai Zhou, San Jose, CA (US);

Assignee:

Monolithic Power Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 3/20 (2006.01); H02H 9/04 (2006.01); H02H 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An input surge suppression device and method that uses a simple JFET structure. The JFET has its gate clamped to a predetermined value, its the drain receives the input voltage from an input power source, its source is connected to the input of a down-stream device, and a resistor connected between the drain and the gate or between the source and the gate. Thus, when the drain voltage approximates the clamped gate voltage, the source voltage nearly equals the drain voltage. When the drain voltage rises above the clamped gate voltage, the source voltage is lower than the drain voltage. The downstream device may be a DC-DC converter and the gate is biased by the enable (EN) pin of a DC-DC converter.


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