The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Jul. 31, 2006
Masaya Sumita, Hyogo, JP;
Masaya Sumita, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor integrated circuit () comprises a substrate voltage control circuit (A), a drain current adjuster (E), a MOS device characteristic detection circuit (), and a drain current compensator (E). The substrate voltage control circuit (A) has at least one substrate voltage supply MOS device (m) for controlling the supply of the substrate voltage of the semiconductor integrated circuit (). The drain current adjuster (E) adjusts the drain current of the substrate voltage supply MOS device (m) by controlling the substrate voltage of the substrate voltage supply MOS device (m). The MOS device characteristic detection circuit () has a characteristic detection device (m) for detecting the characteristics of the substrate voltage supply MOS device (m). The drain current compensator (E) corrects the drain current of the substrate voltage supply MOS device (m) by controlling the substrate voltage of the substrate voltage supply MOS device (m) according to the characteristics of the substrate voltage supply MOS device (m) detected by the MOS device characteristic detection circuit ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile